? 2012 ixys corporation, all rights reserved symbol test conditions maximum ratings v ces t c = 25c to 150c 3000 v v cgr t j = 25c to 150c, r ge = 1m 3000 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25c 30 a i c110 t c = 110c 12 a i cm t c = 25c, 1ms 100 a ssoa v ge = 15v, t vj = 125c, r g = 30 i cm = 98 a (rbsoa) clamped inductive load 1500 v p c t c = 25c 160 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6mm (0.062 in.) from case for 10s 300 c t sold plastic body for 10 seconds 260 c m d mounting torque (to-247) 1.13/10 nm/lb.in. weight to-268 4 g to-247 6 g ds100120a(10/12) ixbt12n300 IXBH12N300 v ces = 3000v i c110 = 12a v ce(sat) 3.2v high voltage, high gain bimosfet tm monolithic bipolar mos transistor features z high blocking voltage z international standard packages z anti-parallel diode z low conduction losses advantages z low gate drive requirement z high power density applications: z switched-mode and resonant-mode power supplies z uninterruptible power supplies (ups) z laser generators z capacitor discharge circuits z ac switches symbol test conditions characteristic values (t j = 25c unless otherwise specified) min. typ. max. bv ces i c = 250 a, v ge = 0v 3000 v v ge(th) i c = 250 a, v ce = v ge 3.0 5.0 v i ces v ce = 0.8 ? v ces , v ge = 0v 25 a t j = 125c 1 ma i ges v ce = 0v, v ge = 20v 100 na v ce(sat) i c = 12a, v ge = 15v, note 1 2.8 3.2 v t j = 125c 3.5 v g = gate c = collector e = emiiter tab = collector to-247 (ixbh) g e c (tab) c to-268 (ixbt) e g c (tab)
ixys reserves the right to change limits, test conditions and dimensions. ixbt12n300 IXBH12N300 symbol test conditions characteristic values ( t j = 25c unless otherwise specified) min. typ. max. g fs i c = 12a, v ce = 10v, note 1 6.5 10.8 s c ies 1290 pf c oes v ce = 25v, v ge = 0v, f = 1mhz 56 pf c res 19 pf q g 62 nc q ge i c = 12a, v ge = 15v, v ce = 1000v 13 nc q gc 8.5 nc t d(on) 64 ns t r 140 ns t d(off) 180 ns t f 540 ns t d(on) 65 ns t r 395 ns t d(off) 175 ns t f 530 ns r thjc 0.78 c/w r thcs to-247 0.21 c/w note 1: pulse test, t 300 s, duty cycle, d 2%. ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 resistive switching times, t j = 125c i c = 12a, v ge = 15v v ce = 1250v, r g = 10 resistive switching times, t j = 25c i c = 12a, v ge = 15v v ce = 1250v, r g = 10 reverse diode symbol test conditions characteristic values (t j = 25c unless otherwise specified) min. typ. max. v f i f = 12a, v ge = 0v 2.1 v t rr 1.4 s i rm 21 a i f = 6a, v ge = 0v, -di f /dt = 100a/ s v r = 100v, v ge = 0v to-247 outline terminals: 1 - gate 2 - collector 3 - emitter to-268 outline terminals: 1 - gate 2,4 - collector 3 - emitter e ? p 1 2 3 dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 s 6.15 bsc 242 bsc
? 2012 ixys corporation, all rights reserved ixbt12n300 IXBH12N300 fig. 1. output characteristics @ t j = 25oc 0 4 8 12 16 20 24 0 0.5 1 1.5 2 2.5 3 3.5 4 v ce - volts i c - amperes v ge = 25v 20v 15v 10v 5v fig. 2. extended output characteristics @ t j = 25oc 0 40 80 120 160 200 240 0 5 10 15 20 25 30 v ce - volts i c - amperes v ge = 25v 10v 15v 20v 5v fig. 3. output characteristics @ t j = 125oc 0 4 8 12 16 20 24 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 v ce - volts i c - amperes v ge = 25v 20v 15v 10v 5v fig. 4. dependence of v ce(sat) on junction temperature 0.6 0.8 1.0 1.2 1.4 1.6 1.8 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade v ce(sat) - normalized v ge = 15v i c = 24a i c = 12a i c = 6a fig. 5. collector-to-emitter voltage vs. gate-to-emitter voltage 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 5 7 9 1113151719212325 v ge - volts v ce - volts i c = 24a t j = 25oc 6a 12a fig. 6. input admittance 0 4 8 12 16 20 24 28 32 36 40 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 v ge - volts i c - amperes t j = 125oc 25oc - 40oc
ixys reserves the right to change limits, test conditions and dimensions. ixbt12n300 IXBH12N300 fig. 7. transconductance 0 2 4 6 8 10 12 14 16 18 0 5 10 15 20 25 30 35 40 45 i c - amperes g f s - siemens t j = - 40oc 25oc 125oc fig. 9. gate charge 0 2 4 6 8 10 12 14 16 0 102030405060 q g - nanocoulombs v ge - volts v ce = 1kv i c = 12a i g = 10ma fig. 11. reverse-bias safe operating area 0 20 40 60 80 100 500 1000 1500 2000 2500 3000 v ce - volts i c - amperes t j = 125oc r g = 30 ? dv / dt < 10v / ns fig. 10. capacitance 10 100 1,000 10,000 0 5 10 15 20 25 30 35 40 v ce - volts capacitance - picofarads f = 1 mhz c ies c oes c res fig. 12. maximum transient thermal impedance 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w fig. 8. forward voltage drop of intrinsic diode 0 4 8 12 16 20 24 28 32 36 00.511.522.53 v f - volts i f - amperes t j = 125oc t j = 25oc
? 2012 ixys corporation, all rights reserved ixbt12n300 IXBH12N300 ixys ref: b_12n300(4p)06-05-12 fig. 14. resistive turn-on rise time vs. collector current 0 100 200 300 400 500 600 6 8 10 12 14 16 18 20 22 24 i c - amperes t r - nanoseconds r g = 10 ? , v ge = 15v v ce = 1250v t j = 125oc t j = 25oc fig. 15. resistive turn-on switching times vs. gate resistance 250 300 350 400 450 500 550 600 650 700 750 10 20 30 40 50 60 70 80 90 100 r g - ohms t r - nanoseconds 50 60 70 80 90 100 110 120 130 140 150 t d ( on ) - nanoseconds t r t d(on) - - - - t j = 125oc, v ge = 15v v ce = 1250v i c = 24a, 12a fig. 16. resistive turn-off switching times vs. junction temperature 200 300 400 500 600 700 800 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t f - nanoseconds 140 150 160 170 180 190 200 t d ( off ) - nanoseconds t f t d(off) - - - - r g = 10 ? , v ge = 15v v ce = 1250v i c = 24a i c = 12a fig. 17. resistive turn-off switching times vs. collector current 0 200 400 600 800 1000 1200 1400 6 8 10 12 14 16 18 20 22 24 i c - amperes t f - nanoseconds 60 100 140 180 220 260 300 340 t d ( off ) - nanoseconds t f t d(off) - - - - r g = 10 ? , v ge = 15v v ce = 1250v t j = 125oc, 25oc fig. 13. resistive turn-on rise time vs. junction temperature 0 100 200 300 400 500 600 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t r - nanoseconds r g = 10 ? , v ge = 15v v ce = 1250v i c = 12a i c = 24a fig. 18. resistive turn-off switching times vs. gate resistance 250 300 350 400 450 500 550 600 650 700 10 20 30 40 50 60 70 80 90 100 r g - ohms t f - nanoseconds 0 100 200 300 400 500 600 700 800 900 t d ( off ) - nanoseconds t f t d(off ) - - - - t j = 125oc, v ge = 15v v ce = 1250v i c = 24a i c = 12a
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